composite transistors 1 publication date: december 2003 sjj00224ced xp0d874 (XP1D874) n-channel junction fet for low-frequency impedance conversion for infrared sensor features ? two elements incorporated into one package ? reduction of the mounting area and assembly cost by one half basic part number ? 2sk1842 2 absolute maximum ratings t a = 25 c unit: mm internal connection electrical characteristics t a = 25 c 3 c parameter symbol conditions min typ max unit gate-drain surrender voltage v gds i g = ? 10 a, v ds = 0 ? 40 v drain-source cutoff current i dss v ds = 10 v, v gs = 0 30 200 a gate-source cutoff current i gss v gs = ? 20 v, v ds = 0 ? 0.5 na gate-source cutoff voltage v gsc v ds = 10 v, i d = 1 a ? 1.3 ? 3.0 v forward transfer admittance ? y fs ? v ds = 10 v, v gs = 0, f = 1 khz 0.05 ms short-circuit forward transfer c iss v ds = 10 v, v gs = 0, f = 1 mhz 1.0 pf capacitance (common-source) short-circuit output capacitance c oss 0.4 pf (common-source) reverse transfer capacitance c rss 0.4 pf (common-source) marking symbol: eq parameter symbol rating unit gate-drain voltage (source open) v gdo ? 40 v gate-source voltage (drain open) v gso ? 40 v drain current i d 1ma gate current i g 10 ma total power dissipation p t 150 mw channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c 3 4 fet1 fet2 12 5 2.1 0.1 0.9 +0.2 ?0.1 0.9 0.1 0 to 0.1 1.25 0.10 1 3 2 0.20 0.05 0.425 1.3 0.1 2.0 0.1 54 0.65 0.65 0.2 0.1 0.12 +0.05 ?0.02 5? 10? 1: source (fet1) 4: gate (fet2) 2: drain 5: gate (fet1) 3: source (fet2) eiaj: sc-88a smini5-g1 package note) the part number in the parenthesis shows conventional part number. note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
xp0d874 2 sjj00224ced ? y fs ? ? v gs ? y fs ? ? i d p t ? t a i d ? v ds i d ? v gs 0 160 40 120 80 0 250 200 150 100 50 total power dissipation p t (m w ) ambient temperature t a ( c ) 012 810 6 4 2 0 0.16 0.12 0.08 0.04 t a = 25 c drain current i d ( ma ) drain-source voltage v ds ( v ) v gs = 0.4 v 0.2 v 0 v ? 0.2 v ? 0.4 v ? 0.6 v ? 1.2 0 ? 0.2 ? 0.4 ? 1.0 ? 0.6 ? 0.8 0 0.10 0.08 0.06 0.04 0.02 v ds = 10 v drain current i d ( ma ) gate-source voltage v gs ( v ) 85 c t a = ? 25 c 25 c ? 2.5 0 ? 0.5 ? 2.0 ? 1.5 ? 1.0 0 0.12 0.10 0.08 0.06 0.04 0.02 v ds = 10 v t a = 25 c forward transfer admittance ? y fs ? ( ms ) gate-source voltage v gs (v) 0.01 0.08 0.02 0.04 0.06 0 0.12 0.10 0.08 0.06 0.04 0.02 v ds = 10 v t a = 25 c forward transfer admittance ? y fs ? ( ms ) drain current i d (ma)
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